1 www.fairchildsemi.com ?2006 fairchild semiconductor corporation fqd3n60c / fqu3n60c rev. c0 fqd3n60c / fqu3n60c n-channel qfet ? mosfet fqd3n60c / fqu3n60c n-channel qfet ? m osfet 600 v, 2.4 a, 3.4 ? ? 2.4 a, 600 v, r ds(on) = 3.4 ? (max.) @ v gs = 10 v, i d = 1.2 a ? low gate charge (ty p. 10.5 nc) ? low crss (typ. 5 pf) ? 100% a valanche tested description thi s n-chan nel enhancement mode p owe r mosfet is produce d using f airchild semiconductor?s prop rietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to red uce on-state resistance, and to provide superior switching perfo rmance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor cor rec tion (pfc), and electronic lamp ballas absolute maximum ratings thermal characteristics d g s i-pak d-pak symbol parameter fqd3n60c / fqu3n60c unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 2.4 a - continuous (t c = 100c) 1.5 a i dm drain current - pulsed (note 1) 9.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj i ar avalanche current (note 1) 2.4 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 50 w - derate above 25c 0.4 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqd3n60c / fqu3n60c unit r jc thermal resistance, junction-to-case , max. 2.5 c /w r ja* thermal resistance, junction-to-ambient* 50 c /w r ja thermal resistance, junction-to-ambient, max. 110 c /w * when mounted on the minimum pad size recommended (pcb mount) features april 2013 g s d g d s
2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 47mh, i as = 2.4a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 3a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqd3n60c fqd3n60ctm d-pak 380mm 16mm 2500 fqd3n60c fqd3n60ctf d-pak 380mm 16mm 2000 fqu3n60c fqu3n60ctu i-pak - - 75 symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 . 0- -4 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.2 a -- 2.8 3.4 ? g fs forward transconductance v ds = 40 v, i d = 1.2 a (note 4) -- 3.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 435 565 pf c oss output capacitance -- 45 60 pf c rss reverse transfer capacitance -- 5 8 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 3a, r g = 25 ? (note 4, 5) -- 12 34 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = 480 v, i d = 3a, v gs = 10 v (note 4, 5) -- 10.5 14 nc q gs gate-source charge -- 2.1 -- nc q gd gate-drain charge -- 4.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 3 a i sm maximum pulsed drain-source diode forward current -- -- 12 a v sd drain-source diode forward voltage v gs = 0 v, i s = 2.4 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 3 a, di f / dt = 100 a/ s (note 4) -- 260 -- ns q rr reverse recovery charge -- 1.6 -- c fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild semiconductor corporation fqd3n60c / fqu3n60c rev. c0
3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 01234567 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 25 0 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; ? 1. v gs = 0 v 2 . f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 024681 01 2 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc] fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild s emiconductor corporation fqd3n60c / fqu3n60c rev. c0
4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? notes : 1. v gs = 10 v 2. i d = 1.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t c , case temperature [ ] ? 10 0 10 -2 10 -1 10 0 10 1 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.5 /w m ax. ? 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild s emiconductor corporation fqd3n60c / fqu3n60c rev. &
5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild s emiconductor corporation fqd3n60c / fqu3n60c rev. c0
6 peak diode recovery dv/dt test circuit & waveforms fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild s emiconductor corporation fqd3n60c / fqu3n60c rev. c0
mechanical dimensions dimensions in millimeters d-pak fqd3n60c / fqu3n60c n-channel qfet ? mosfet www.fairchildsemi.com ?2006 fairchild semiconductor corporation c0 7 c 0
mechanical dimensions i-pak dimensions in millimeters fqd3n60c / fqu3n60c n-channel qfet ? mosfet 8 c0
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fqd3n60c / fqu3n60c n-channel qfet ? 9 c 0
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